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Conductive silicon carbide substrateThird generation semiconductor materialsMaster the industry-leading 6-12inch silicon carbide crystal growing technology,and hold independent and controllable large-size silicon carbide crystal growing and processing technology. -
Optical SiC WaferThird generation semiconductor materialsSuperSiC possesses industry-leading 8–12 inch optical-grade silicon carbide crystal growth technology, featuring self-controllable capabilities for the growth and fabrication of large-size optical-grade SiC crystals.
